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Home > Anterior Cervical Plating Systems > CVD Ald Atomic Layer Deposition System for Powder Coating Plating
CVD Ald Atomic Layer Deposition System for Powder Coating Plating
CVD Ald Atomic Layer Deposition System for Powder Coating Plating
CVD Ald Atomic Layer Deposition System for Powder Coating Plating
CVD Ald Atomic Layer Deposition System for Powder Coating Plating
CVD Ald Atomic Layer Deposition System for Powder Coating Plating
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CVD Ald Atomic Layer Deposition System for Powder Coating Plating
CVD Ald Atomic Layer Deposition System for Powder Coating Plating
CVD Ald Atomic Layer Deposition System for Powder Coating Plating
CVD Ald Atomic Layer Deposition System for Powder Coating Plating
CVD Ald Atomic Layer Deposition System for Powder Coating Plating

CVD Ald Atomic Layer Deposition System for Powder Coating Plating

Customization: Available
After-sales Service: Onlin
Warranty: 1
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Product Description

Product Overview
Basic Info.
Model NO.
CY-ALD
Type
Coating Production Line
Coating
Vacuum Coating
Certification
CE
Condition
New
Wafer Dimension
8 Inch and Below
Wafer Temperature
Rt-400c, ±0.1c Precision
Precursor Lines
Three Lines (Optional More)
ALD Valve
Swagelok ALD Swift Valve
Background Vacuum
<5*10-3torr
Gas Carrier System
N2 or Ar
HS Code
8412800090
Packaging & Delivery
Package Size
1200.00cm * 800.00cm * 1100.00cm
Gross Weight
280.000kg
Transport Package
Standard Export Wooden Box
CVD ALD Atomic Layer Deposition System

The Thermal Atomic Layer Deposition System is a specialized single-wafer deposition system designed for advanced scientific research and industrial pilot experiments. Fully compliant with CE criteria, it is widely utilized in micro-electronics, nano-materials, optical films, and solar battery technology.

Core Benefits
  • Advanced software control
  • Technological formulation integration
  • Precise parameter setting
  • Interlocking alarming system
  • Real-time state supervisory control
Supported ALD Films

Elementary: Co, Cu, Ta, Ti, W, Ge, Pt, Ru, Ni, Fe...
Nitride: TiN, SiN, AlN, TaN, ZrN, HfN, WN...
Oxide: TiO2, HfO2, SiO2, ZnO, ZrO2, Al2O3, La2O3, SnO2...
Others: GaAs, AlP, InP, GaP, InAs, LaHfxOy, SrTiO3, SrTaO6...

Application Fields
📍 High-k gate oxides
📍 Storage capacitor dielectrics
📍 Cu interconnect barriers
📍 OLED passivation layers
📍 MEMS coatings
📍 Solar battery cells
📍 Optical thin-films
📍 Nanoporous structures
Technical Parameters
Wafer Dimension8 inch and below
Wafer TemperatureRT-400ºC, Precision ±0.1ºC
Number of PrecursorThree precursor lines (optional more)
Precursor Line TempRT-200ºC, Precision ±0.1ºC
Source Bottle TempRT-200ºC, Precision ±0.1ºC
Background Vacuum<5*10-3 Torr
Growing ModeConsecutive or interval deposition
Power Supply50-60Hz, 220V/20A AC
Heterogeneity<±1%
Instrument Dimension600mm x 600mm x 1100mm
Detailed Photos
ALD System View 1
ALD System View 2
ALD System View 3
ALD System View 4
ALD System View 5
ALD System View 6
Technical Schematic
Frequently Asked Questions
Q: What is the main application of this ALD system?
A: It is primarily used for depositing high-k gate oxides, storage capacitor dielectrics, and pinhole-free passivation layers for OLEDs, MEMS, and solar cells.
Q: Can the system be customized for more precursor lines?
A: Yes, the standard configuration includes three precursor lines, but optional additional lines can be added based on specific research needs.
Q: What is the temperature control precision for wafers?
A: The system provides high-precision control within ±0.1ºC for wafer temperatures ranging from RT up to 400ºC.
Q: Does the equipment meet international safety standards?
A: Yes, the electric system of the ALD equipment completely accords with CE criteria, ensuring safety for laboratory and industrial use.
Q: How is the product protected during shipping?
A: All units are packaged in standard export fumigation-free wooden boxes to ensure safety during express, air, or sea transport.
Q: What type of after-sales support is provided?
A: We offer a 12-month warranty period with lifetime maintenance support and technical response within 24 hours.

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